document number: 94383 for technical questions, contact: diodestech@vishay.com www.vishay.com revision: 17-sep-09 1 surface mountable phase control scr, 16 a 25tts...spbf high voltage series vishay high power products description/features the 25tts...spbf high voltage series of silicon controlled rectif iers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. typical applications are in input rectification (soft start) and these products are designed to be used with vishay hpp input diodes, switches and output rectifiers which are available in identical package outlines. this product has been designed and qualified for industrial level. compliant to rohs directive 2002/95/ec. halogen-free according to iec 61249-2-21 definition. note ?t a = 55 c, t j = 125 c, footprint 300 mm 2 product summary v t at 16 a < 1.25 v i tsm 300 a v rrm 800 v to 1600 v d 2 pa k gate 2 anode cathode 1 3 output current in typical applications applications single-phase bridge three-phase bridge units nema fr-4 or g10 glass fabric-based epoxy with 4 oz. (140 m) copper 3.5 5.5 a aluminum ims, r thca = 15 c/w 8.5 13.5 aluminum ims with heatsink, r thca = 5 c/w 16.5 25.0 major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 16 a i rms 25 v rrm /v drm 800 to 1600 v i tsm 300 a v t 16 a, t j = 25 c 1.25 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm , at 125 c ma 25tts08spbf 800 800 10 25tts12spbf 1200 1200 25tts16spbf 1600 1600 * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94383 2 revision: 17-sep-09 25tts...spbf high voltage series vishay high power products surface mountable phase control scr, 16 a absolute maximum ratings parameter symbol test conditions values units typ. max. maximum average on-state current i t(av) t c = 93 c, 180 conduction half sine wave 16 a maximum rms on-state current i rms 25 maximum peak, one-cycle, non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied 300 10 ms sine pulse, no voltage reapplied 350 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 450 a 2 s 10 ms sine pulse, no voltage reapplied 630 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 6300 a 2 s maximum on-state voltage drop v tm 16 a, t j = 25 c 1.25 v on-state slope resistance r t t j = 125 c 12.0 m threshold voltage v t(to) 1.0 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h 25tts08, 25tts12 anode supply = 6 v, resistive load, initial i t = 1 a - 100 25tts16 100 150 maximum latching current i l anode supply = 6 v, resistive load 200 maximum rate of rise of off-state voltage dv/dt 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current + i gm 1.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 10 c 60 ma anode supply = 6 v, resistive load, t j = 25 c 45 anode supply = 6 v, resistive load, t j = 125 c 20 maximum required dc gate voltage to trigger v gt anode supply = 6 v, resistive load, t j = - 10 c 2.5 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate voltage not to trigger v gd t j = 125 c, v drm = rated value 0.25 maximum dc gate current not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical reverse recovery time t rr t j = 125 c 4 typical turn-off time t q 110
document number: 94383 for technical questions, contact: diodestech@vishay.com www.vishay.com revision: 17-sep-09 3 25tts...spbf high voltage series surface mountable phase control scr, 16 a vishay high power products note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m] copper 40 c/w for recommended footprint and soldering te chniques refer to application note #an-994 thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 125 c soldering temperature t s for 10 s (1.6 mm from case) 240 maximum thermal resistance, junction to case r thjc dc operation 1.1 c/w typical thermal resistance, junction to ambient (pcb mount) r thja (1) 40 approximate weight 2g 0.07 oz. marking device case style d 2 pak (smd-220) 25tts08s 25tts12s 25tts16s
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94383 4 revision: 17-sep-09 25tts...spbf high voltage series vishay high power products surface mountable phase control scr, 16 a fig. 1 - current ra ting characteristics fig. 2 - current ra ting characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 90 100 110 120 130 0 5 10 15 20 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average on-sta te current (a) 25tts.. series r (dc) = 1.1 c/ w thjc 80 90 100 110 120 130 0 5 10 15 20 25 30 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 25tt s. . se r i e s r (dc) = 1.1 c/ w thjc 0 5 10 15 20 25 048121620 rm s li m i t conduction angle maximum average on-state power loss (w) avera ge on-state current (a) 180 120 90 60 30 25tt s. . se r i e s t = 125c j 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) 25tt s. . se r i e s t = 125c j 150 200 250 300 350 110100 number of equal amplitude half cycle current pulses (n) pe a k ha l f s ine wave on-sta te current (a) initia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 25tt s. . se r i e s at any rated load condition and with ra ted v ap p lie d fo llo w ing surg e . rrm 100 150 200 250 300 350 400 0.01 0.1 1 pe a k ha lf s ine wa ve on-state current (a) pu lse tra in d u ra t io n ( s) maximum non repetitive surge current versus pulse train duration. control of cond uc tion ma y not be ma inta ined. initia l t = 125c no voltage reapplied ra te d v rea p p lied rrm j 2 5 tts. . se r i e s
document number: 94383 for technical questions, contact: diodestech@vishay.com www.vishay.com revision: 17-sep-09 5 25tts...spbf high voltage series surface mountable phase control scr, 16 a vishay high power products fig. 7 - on-state voltage drop characteristics fig. 8 - gate characteristics fig. 9 - thermal impedance z thjc characteristics 1 10 100 1000 012345 t = 2 5 c j inst a nta n eo us on -st at e current (a) instantaneous on-state voltage (v) t = 125c j 2 5 tts. . se r i e s 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 sq ua re wa ve pulse duration (s) steady state value (dc opera tion) si n g l e pu l se d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 25tts.. se ries thjc tra nsient thermal imp ed anc e z (c/w) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a ) rectangular gate pulse (4) (3) (2) (1) instantaneous gate current (a) instantaneous gate voltage (v) tj = 2 5 c t j = 125 c b)recommended load line for frequency limited by pg(av) a)recommended load line for rated di/dt: 10 v, 20 ohms tr = 0.5 s, tp >= 6 s tj = - 1 0 c 2 5 tts. . se r i e s ig d vg d <= 30% rated d i/ dt: 10 v, 65 ohms tr = 1 s, tp >= 6 s (1) pgm = 40 w, t p = 1 ms (2) pgm = 20 w, t p = 2 ms (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94383 6 revision: 17-sep-09 25tts...spbf high voltage series vishay high power products surface mountable phase control scr, 16 a ordering information table 1 - current rating (25 = 25 a) 2 - circuit configuration: 3 - package: 4 t = single thyristor - type of silicon: 5 - voltage rating = voltage code x 100 = v rrm t = to-220ac standard recovery rectifier 6 - s = to-220 d 2 pak (smd-220) version 7 - none = tube trl = tape and reel (left oriented) trl = tape and reel (left oriented) trr = tape and reel (right oriented) 8 - none = standard production pbf = lead (pb)-free 08 = 800 v 12 = 1200 v 16 = 1600 v device code 5 13 24 678 25 t t s 12 s trl pbf links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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